powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 six igbtmod? + brake nx-series module 200 amperes/600 volts CM200RX-12A 1 rev. 11/08 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of six igbt transistors in a three phase bridge configuration and a seventh igbt with free- wheel diode for dynamic braking. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM200RX-12A is a 600v (v ces ), 200 ampere six-igbtmod? + brake power module. type current rating v ces amperes volts (x 50) cm 200 12 outline drawing and circuit diagram p(35) b(4) g w n(14) g w p(18) e w p(17) g v n(22) g v p(26) e v p(25) g u n(30) e w n(13) e v n(21) e u n(29) g u p(34) e u p(33) u(1) v(2) w(3) gb(6) n(36) th 1 (11) th 2 (10) ntc eb(5) a ah az ba q r s t u v h x y z z n m l k b an aj ap am am am ak am am aj al ax ay ak al al al al al al z r q q r d e f g h j p p w j p aa(4 places) detail "b" *all pin dimensions within a tolerance of 0.5 ab (6 places) detail "a" 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 detail "b" c r at au aq av aw as ar al al ad ae af ag bb bc bd be ac detail "a" dimensions inches millimeters a 5.39 136.9 b 3.03 77.1 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 4.79 121.7 e 4.330.02 110.00.5 f 3.89 99.0 g 3.72 94.5 h 0.83 21.14 j 0.37 6.5 k 2.44 62.0 l 2.26 57.5 m 1.970.02 50.00.5 n 1.53 39.0 p 0.24 6.0 q 0.48 12.0 r 0.67 17.0 s 1.53 39.0 t 0.87 22.0 u 0.55 14.0 v 0.54 13.64 w 0.33 8.5 x 0.53 13.5 y 0.81 20.71 z 0.9 22.86 aa 0.22 dia. 5.5 dia. ab m5 m5 ac 0.06 1.5 dimensions inches millimeters ad 0.51 13.0 ae 0.12 3.0 af 0.21 5.4 ag 0.49 12.5 ah 0.81 20.5 aj 0.30 7.75 ak 0.28 7.25 al 0.15 3.81 am 0.45 11.44 an 0.14 3.5 ap 0.16 4.06 aq 0.78 20.05 ar 0.03 0.8 as 0.27 7.0 at 0.16 4.2 au 0.61 15.48 av 0.60 15.24 aw 0.46 11.66 ax 0.04 1.15 ay 0.02 0.65 az 0.29 7.4 ba 0.05 6.2 bb 0.49 12.5 bc 0.17 dia. 4.3 dia. bd 0.10 dia. 2.5 dia. be 0.08 dia. 2.1dia.
CM200RX-12A six igbtmod? + brake nx-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 2 rev. 11/08 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol CM200RX-12A units power device junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, m5 mounting screws 31 in-lb mounting torque, m5 main terminal screws 31 in-lb module weight (typical) 330 grams isolation voltage, ac 1 minute, 60hz sinusoidal v iso 2500 volts inverter sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 68c)* i c 200 amperes peak collector current** i cm 400 amperes emitter current (t c = 25c, t j < 150c)* i e *** 200 amperes peak emitter current (t j < 150c)** i em *** 400 amperes maximum collector dissipation (t c = 25c, t j < 150c)* p c 735 watts brake sector collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 75c)* i c 100 amperes peak collector current** i cm 200 amperes maximum collector dissipation (t c = 25c, t j < 150c)* p c 400 watts repetitive peak reverse voltage (clamp diode part) v rrm *** 600 volts forward current (t c = 25c)* i f *** 100 amperes forward current (clamp diode part)** i fm *** 200 amperes *t c , t f measured point is just under the chips. **pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. ***represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
CM200RX-12A six igbtmod? + brake nx-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 3 rev. 11/08 electrical and mechanical characteristics, t j = 25c unless otherwise specifed inverter sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c 1.7 2.1 volts i c = 200a, v ge = 15v, t j = 125c 1.9 volts i c = 200a, v ge = 15v, chip 1.6 volts input capacitance c ies 27.0 nf output capacitance c oes v ce = 10v, v ge = 0v 2.7 nf reverse transfer capacitance c res 0.8 nf total gate charge q g v cc = 300v, i c = 200a, v ge = 15v 530 nc inductive turn-on delay time t d(on) 120 ns load turn-on rise time t r v cc = 300v, i c = 200a, 150 ns switch turn-off delay time t d(off) v ge = 15v, 350 ns time turn-off fall time t f r g = 5.6 , i e = 150a, 600 ns reverse recovery time* t rr inductive load switching operation 200 ns reverse recovery charge* qrr 5.0 c emitter-collector voltage* v ec i e = 200a, v ge = 0v, t j = 25c 2.0 2.8 volts i e = 200a, v ge = 0v, t j = 125c 1.95 volts i e = 200a, v ge = 0v, chip 1.9 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case** r th(j-c) q per igbt 0.17 c/w thermal resistance, junction to case** r th(j-c) d per fwdi 0.33 c/w contact thermal resistance** r th(c-f) thermal grease applied 0.015 c/w internal gate resistance r gint t c = 25c 0 external gate resistance r g 3.0 30 *represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). **t c , t f measured point is just under the chips. 34 0 0 0 0 33 32 31 30 29 28 27 26 25 24 23 22 dimensions in mm (tolerance: 1mm) 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 igbt fwdi ntc thermistor chip location (top view) 1 7. 4 22.9 33.9 44.9 55.9 79.4 92.4 106.0 39.7 24.4 u p v p w p w n v n u n br 100.2 26.8 th 22.9 33.9 44.9 55.9 79.4 91.4 101. 8 18.3 28.0 35.0 u p v p w p w n br v n u n chip location (top view)
CM200RX-12A six igbtmod? + brake nx-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 4 rev. 11/08 electrical and mechanical characteristics, t j = 25c unless otherwise specifed brake sector characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter threshold voltage v ge(th) i c = 10ma 5 6 7 volts gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 1.7 2.1 volts i c = 100a, v ge = 15v, t j = 125c 1.9 volts i c = 100a, v ge = 15v, chip 1.6 volts input capacitance c ies 13.3 nf output capacitance c oes v ce = 10v, v ge = 0v 1.4 nf reverse transfer capacitance c res 0.45 nf total gate charge q g v cc = 300v, i c = 100a, v ge = 15v 300 nc repetitive reverse current* i rrm v r = v rrm 1.0 ma forward voltage drop * v f i f = 100a, t j = 25c 2.0 2.8 volts i f = 100a, t j = 125c 1.95 volts i f = 100a, chip 1.9 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case** r th(j-c) q per igbt 0.31 c/w thermal resistance, junction to case** r th(j-c) d per fwdi 0.59 c/w contact thermal resistance** r th(j-f) thermal grease applied 0.015 c/w internal gate resistance r gint t c = 25c 0 external gate resistance r g 6 62 ntc thermistor sector , t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units zero power resistance r t c = 25c 4.85 5.00 5.15 k deviation of resistance ? r/r t c = 100c, r 100 = 493 C7.3 +7.8 % b constant b (25/50) b = (inr 1 C inr 2 ) / (1/t 1 C 1/t 2 )*** 3375 k power dissipation p 25 t c = 25c 10 mw *represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). **t c , t f measured point is just under the chips. ***r1: resistance at absolute temperature t 1 (k), r 2 : resistance at absolute temperature t 2 (k), t(k) = t(c) + 273.15
CM200RX-12A six igbtmod? + brake nx-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 5 rev. 11/08 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 1 0 1 3 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 t j = 25 c 400 100 200 300 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 400 300 100 200 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 5.1? t j = 125c inductive load t f 10 3 gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 0 10 1 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v i c = 200a t j = 125c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 200 800 600 400 v cc = 300v v cc = 200v i c = 200a emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 300v v ge = 15v r g = 5.1? t j = 25c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
CM200RX-12A six igbtmod? + brake nx-series module 200 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 6 rev. 11/08 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.17c/w (igbt) r th(j-c) = 0.33c/w (fwdi) normalized transient thermal impedance, z th(j-c') time, (s) transient thermal impedance characteristics (brake part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.31c/w (igbt) r th(j-c) = 0.59c/w (fwdi) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i c = 200a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i e = 200a t j = 125c inductive load 10 2 reverse recovery switching loss vs. gate resistance (inverter part - typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 -1 v cc = 300v v ge = 15v r g = 5.1? t j = 125c inductive load 10 3 reverse recovery switching loss vs. emitter current (inverter part - typical) e rr e rr v cc = 300v v ge = 15v r g = 5.1? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 2 10 1 10 1 10 2 10 0 10 -1 10 3 switching loss vs. collector current (inverter part - typical) 0 1 3 2 4 10 0 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (brake part - typical) 10 2 10 3 forward current, i f , (amperes) collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (brake part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 200 150 50 100 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c
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